Samsung Electronics says HBM to account for nearly 30% of industry DRAM capacity next year
SEOUL, Sept 29 : A Samsung Electronics executive said on Tuesday that high-bandwidth memory (HBM) is expected to account for nearly 30 per cent of Dynamic Random-Access Memory (DRAM) chipmakers' total wafer capacity next year, up from about 20 per cent currently. Samsung Electronics Executive Vice President K
29 Sep 01:07 · CNA