A roadmap for atomic force microscopy use in next-generation semiconductor and energy materials research

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For smartphones and computers to become smaller and faster, technologies capable of precisely controlling electrical properties at the nanoscale—beyond what is visible to the naked eye—are essential. In particular, ferroelectric materials, which can maintain their electrical state without external power, are gaining attention as key components for next-generation memory and sensor technologies. However, due to their extremely small size, there have been limitations in precisely observing the internal changes occurring within these materials.

New review maps AFM-based strategies

A research team led by Professor Seungbum Hong from the Department of Materials Science and Engineering has published a review paper in the Journal of Materials Chemistry C systematically outlining research strategies for ferroelectric materials based on atomic force microscopy (AFM), addressing these limitations.

The research team proposed new strategies for using AFM to precisely control electrical properties at the nanoscale and presented a direction for next-generation materials research.

Ferroelectric materials possess electric polarization similar to magnetism, and this property enables the realization of memory devices that retain information even without power, as well as highly sensitive sensors.

As semiconductor devices continue to shrink, nanoscale physical phenomena increasingly determine overall device performance, making technologies capable of precisely analyzing and controlling these phenomena more important than ever.

AFM as both probe and design tool

The team presented an integrated analytical framework that uses AFM to both observe and directly manipulate materials at the nanoscale. AFM is a device that scans surfaces using an extremely fine probe to obtain atomic-level information, effectively serving as both the "eye" and "hand" of the nanoscale world.

Based on AFM, which measures physical and electrical properties at the atomic scale by scanning surfaces with a fine probe, the researchers established a system that integrates various techniques—including piezoresponse force microscopy (PFM) for measuring electrical responses, Kelvin probe force microscopy (KPFM) for analyzing surface potential, and conductive atomic force microscopy (C-AFM) for measuring current flow—into a unified framework. This allows for a three-dimensional understanding of material structures and charge distributions.

This approach goes beyond simple observation and represents the evolution of AFM into a research platform capable of directly designing and manipulating data domains at the nanoscale by applying electrical stimuli through the probe.

Furthermore, AFM can apply electrical stimulation or mechanical pressure directly to extremely small nanoscale regions, enabling changes and control of material properties. In other words, it has evolved from a tool that merely observes to one that enables design and experimentation at the nanoscale.

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Applications in emerging semiconductor materials

In particular, this study demonstrates applications in evaluating and improving the performance of next-generation semiconductor materials such as two-dimensional transition metal dichalcogenides like molybdenum disulfide (MoS₂) and ultrathin hafnium–zirconium oxide (HfZrO₂)-based materials.

The research team also proposed future directions involving the integration of high-speed AFM with artificial intelligence (AI), enabling rapid interpretation of complex nanoscale structures that are difficult for humans to analyze manually, as well as more efficient design of advanced materials.

Professor Seungbum Hong stated, "This study shows that atomic force microscopy has evolved beyond a simple observation tool into a key process technology for designing and precisely controlling advanced materials," adding, "Analytical techniques combined with artificial intelligence will play a critical role in securing technological competitiveness in next-generation semiconductor and energy materials."

More information

Yeongyu Kim et al, Atomic force microscopy for ferroelectric materials research, Journal of Materials Chemistry C (2026). DOI: 10.1039/d5tc03998c

Key concepts

Electrical propertiesElectronically polarized systemsNanostructuresAtomic techniquesScanning techniques

Provided by The Korea Advanced Institute of Science and Technology (KAIST)