Samsung's archrival becomes first chipmaker to launch 300+ layer TLC NAND flash memory; SK Hynix's 321-layer 1-terabit TLC paves the way for more affordable 100TB+ SSDs

The first 300+ layer NAND chip sets the stage for 100TB SSDs

· TechRadar

News By Efosa Udinmwen published 26 December 2024

(Image credit: SK Hynix)
  • SK Hynix's 321-layer NAND targets AI-driven data storage needs
  • 321-layer NAND flash improves data transfer speed by 12%
  • AI storage demands drive innovation in high-capacity NAND solutions

Samsung and SK Hynix have continued their head-to-head battle in the NAND flash memory market with the latter taking the lead with a new launch.

SK Hynix, the world’s second-largest memory chipmaker, recently became the first to mass-produce triple-level cell (TLC) NAND flash with over 300 layers.

The company’s new 321-layer, 1-terabit TLC 4D NAND flash, announced recently, is set to revolutionize the data storage industry, paving the way for more affordable ultra-high-capacity solid-state drives (SSDs) that exceed 100TB in capacity.

SK Hynix 321-layer NAND

The NAND industry is racing to push the limits of data storage technology, and SK Hynix's achievement is a major milestone.

After the launch of its 238-layer NAND flash last year, SK Hynix’s latest 321-layer NAND flash sets a new industry standard. The company plans to supply these chips to customers starting in the first half of 2025, targeting the booming artificial intelligence (AI) market, which demands high-performance, energy-efficient storage solutions.

The 321-layer NAND was made possible by SK Hynix’s "Three Plugs" process technology, which involves electrically connecting three plugs through an optimized follow-up step, significantly improving the speed, power efficiency, and overall performance of the chips.

SK Hynix also developed a low-stress material and introduced technology that automatically corrects alignment among the plugs to further optimize the manufacturing process.

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